2016InTech eBooksOpen access

Copper-Indium-Gallium-diSelenide (CIGS) Nanocrystalline Bulk Semiconductor as the Absorber Layer and Its Current Technological Trend and Optimization

Nima Khoshsirat, Nurul Amziah Md Yunus

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Abstract

The Copper Indium Gallium diSelenide (CIGS) thin film solar cells are considered in this chapter. The interest in Cu(In1-x, Gax)Se2 thin film solar cells has increased significantly due to its promising characteristics for high performance and low cost. It is aimed to present an extensive evaluation on CIGS nanocrystalline bulk semiconductor and its application as an absorber layer for thin film solar cells. It is also aimed to improve the CIGS thin film solar cell efficiency through finding optimum ranges of material properties. The first section of this chapter gives an extensive overview on CIGS nanocrystalline bulk semiconductor background and technological trend. In the middle section, a brief review on CIGS Solar Cell processing and challenges are highlighted and the last section a numerical simulation results on the effects of each of constructive nano layer properties on cell performance are shown and compared with valid experimental results.

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The Copper Indium Gallium diSelenide (CIGS) thin film solar cells are considered in this chapter. The interest in Cu(In1-x, Gax)Se2 thin film solar cells has increased significantly due to its promising characteristics for high performance and low cost. It is aimed to present an extensive evaluation on CIGS nanocrystalline bulk semiconductor and its application as an absorber layer for thin film solar cells. It is also aimed to improve the CIGS thin film solar cell efficiency through finding optimum ranges of material properties. The first section of this chapter gives an extensive overview on CIGS nanocrystalline bulk semiconductor background and technological trend. In the middle section, a brief review on CIGS Solar Cell processing and challenges are highlighted and the last section a numerical simulation results on the effects of each of constructive nano layer properties on cell performance are shown and compared with valid experimental results.

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Available abstract

The Copper Indium Gallium diSelenide (CIGS) thin film solar cells are considered in this chapter. The interest in Cu(In1-x, Gax)Se2 thin film solar cells has increased significantly due to its promising characteristics for high performance and low cost. It is aimed to present an extensive evaluation on CIGS nanocrystalline bulk semiconductor and its application as an absorber layer for thin film solar cells. It is also aimed to improve the CIGS thin film solar cell efficiency through finding optimum ranges of material properties. The first section of this chapter gives an extensive overview on CIGS nanocrystalline bulk semiconductor background and technological trend. In the middle section, a brief review on CIGS Solar Cell processing and challenges are highlighted and the last section a numerical simulation results on the effects of each of constructive nano layer properties on cell performance are shown and compared with valid experimental results.

Key concepts: Copper indium gallium selenide solar cells, Indium, Nanocrystalline material, Gallium, Materials science, Solar cell, Diselenide, Thin film

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