2016•Bulletin of the American Physical SocietyRequires access

A theoretical study on the thermal oxidation of silicon carbide: Chemical species at the SiO$_{\mathrm{2}}$/SiC interface

Nobuo Tajima, Tomoaki Kaneko, Jun Nara, Takahiro Yamasaki, Tatsuo Schimizu, Koichi Kato, Takahisa Ohno

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Key concepts: Silicon carbide, Thermal oxidation, Materials science, Interface (matter), Carbide, Silicon, Chemical engineering, Thermal

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