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1985•Conference on Lasers and Electro-OpticsRequires access

Metal-organic chemical vapor deposition

J. J. Coleman

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Abstract

Metal-organic chemical vapor deposition (MOCVD) has become an important method in recent years for the growth of high-quality epitaxial layers of various semiconductor materials particularly for use in sophisticated heterostructure and quantum well laser structures. In a typical reactor lower-order metal alkyls, such as trimethylgallium (TMGa) and trimethylaluminum (TMA1), are mixed in the vapor phase with a hydride such as arsine.

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What this paper is about

Metal-organic chemical vapor deposition (MOCVD) has become an important method in recent years for the growth of high-quality epitaxial layers of various semiconductor materials particularly for use in sophisticated heterostructure and quantum well laser structures. In a typical reactor lower-order metal alkyls, such as trimethylgallium (TMGa) and trimethylaluminum (TMA1), are mixed in the vapor phase with a hydride such as arsine.

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Available abstract

Metal-organic chemical vapor deposition (MOCVD) has become an important method in recent years for the growth of high-quality epitaxial layers of various semiconductor materials particularly for use in sophisticated heterostructure and quantum well laser structures. In a typical reactor lower-order metal alkyls, such as trimethylgallium (TMGa) and trimethylaluminum (TMA1), are mixed in the vapor phase with a hydride such as arsine.

Key concepts: Chemical vapor deposition, Materials science, Metal, Deposition (geology), Combustion chemical vapor deposition, Environmental chemistry, Chemical engineering, Environmental science

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