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CW operation at 1.34 μ of an InGaSb quantum-dot vertical-cavity surface-emitting laser (VCSEL) on GaAs substrate

Naokatsu Yamamoto, K. Akabane, Shin-ichiro Gozu, Naoki Ohtani

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Abstract

A vertical-cavity surface-emitting laser containing InGaSb quantum dots in the active region was fabricated on GaAs substrates. We observed the long-wavelength emitting at 1.34/spl mu/m in cw operation at room temperature.

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What this paper is about

A vertical-cavity surface-emitting laser containing InGaSb quantum dots in the active region was fabricated on GaAs substrates. We observed the long-wavelength emitting at 1.34/spl mu/m in cw operation at room temperature.

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Available abstract

A vertical-cavity surface-emitting laser containing InGaSb quantum dots in the active region was fabricated on GaAs substrates. We observed the long-wavelength emitting at 1.34/spl mu/m in cw operation at room temperature.

Key concepts: Vertical-cavity surface-emitting laser, Optoelectronics, Materials science, Quantum dot, Quantum dot laser, Laser, Substrate (aquarium), Gallium arsenide

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CW operation at 1.34 μ of an InGaSb quantum-dot vertical-cavity surface-emitting laser (VCSEL) on GaAs substrate — Research Paper | ScholarLens