2004Micronanoelectronic TechnologyRequires access

Investigation on GaN-based semiconductor optoelectronic material and device

Guo Weilian

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Abstract

GaN material is a kind of compound semiconductor with excellent perform ance. GaN and its correlative compound semiconductor materials are ideal for fab ricating exceed high light-emitting blue and green diode,UV detector and semico nductor blue laser etc. In this paper,investigation on GaN-based optoelectronic devices and their applications is summarized.

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What this paper is about

GaN material is a kind of compound semiconductor with excellent perform ance. GaN and its correlative compound semiconductor materials are ideal for fab ricating exceed high light-emitting blue and green diode,UV detector and semico nductor blue laser etc. In this paper,investigation on GaN-based optoelectronic devices and their applications is summarized.

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Available abstract

GaN material is a kind of compound semiconductor with excellent perform ance. GaN and its correlative compound semiconductor materials are ideal for fab ricating exceed high light-emitting blue and green diode,UV detector and semico nductor blue laser etc. In this paper,investigation on GaN-based optoelectronic devices and their applications is summarized.

Key concepts: Optoelectronics, Semiconductor, Materials science, Compound semiconductor, Diode, Light-emitting diode, Laser, Semiconductor laser theory

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