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Simulation of Gate Delay for InvertedStaggered a-Si TFT-AM-LCD

Mu Li

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Abstract

An equivalent RC circuit of unit pixel,for the simulation of gate delay in a_Si TFT_LCD was developed,in order to optimize the designment of devices.The RC factor is supposed to be contributed by the resistance of gate line、the crossover capacitance and the channel capacitance.The simulation presents the gate delay and the maximum charge on unit pixel,both as the function of diagonal sige and display resolution,regarding gate electrode made from various metal materials.

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What this paper is about

An equivalent RC circuit of unit pixel,for the simulation of gate delay in a_Si TFT_LCD was developed,in order to optimize the designment of devices.The RC factor is supposed to be contributed by the resistance of gate line、the crossover capacitance and the channel capacitance.The simulation presents the gate delay and the maximum charge on unit pixel,both as the function of diagonal sige and display resolution,regarding gate electrode made from various metal materials.

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Available abstract

An equivalent RC circuit of unit pixel,for the simulation of gate delay in a_Si TFT_LCD was developed,in order to optimize the designment of devices.The RC factor is supposed to be contributed by the resistance of gate line、the crossover capacitance and the channel capacitance.The simulation presents the gate delay and the maximum charge on unit pixel,both as the function of diagonal sige and display resolution,regarding gate electrode made from various metal materials.

Key concepts: Capacitance, Liquid-crystal display, Thin-film transistor, Pixel, Diagonal, Crossover, Electronic engineering, Electrical engineering

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Simulation of Gate Delay for InvertedStaggered a-Si TFT-AM-LCD — Research Paper | ScholarLens