2011•Chinese Journal of Power SourcesRequires access

Study on changes of sheet resistance of polycrystalline silicon wafer after oxidation

DU Zhong-ming, Xiong Feiqiao

Abstract

Through the experiment,the results show that the sheet resistance of polycrystalline silicon wafer changes in different ways under different oxidation temperatures.Under high temperature,the sheet resistance of polycrystalline silicon lowers after oxidation;under low temperature,the sheet resistance of polycrystalline silicon rises after oxidation.However,the sheet resistance of monocrystalline silicon always lowers under any temperature.Compared with monocrystalline silicon,it is the special structure of polycrystalline silicon that makes the sheet resistance change in different trends.

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Key concepts: Monocrystalline silicon, Sheet resistance, Polycrystalline silicon, Silicon, Materials science, Wafer, Crystallite, Nanocrystalline silicon