ScholarLens Back to search
2009•Journal of Liaoning UniversityRequires access

Super Performance BiCMOS Band-Gap Voltage Reference

Shi Guang

Open publisher page 0 citations

Abstract

In this paper,a novel high precision CMOS bandgap voltage reference which uses a negative back circuit and a RC filter to enhance the PSRR is proposed.Using 1.2 μm BiCMOS process of Beiling,Shanghai,this bandgap voltage reference was designed and simulated.Cadence Spectre simulation results show that this circuit has higher precision and stability,and the output of the bandgap voltage is 1. 254 V.The greatest skew of reference voltage to input voltage is 0.012 mV in the power supply range from 2.7 V to 5.5 V,and the maximum static current of reference is 11.27 μA;the greatest skew of reference voltage to temperature is about 1 mV in the range of-40 ℃～120 ℃;the total current of the bandgap reference is about 10.6 μA with the power dissipation about 38.16 μW at 3.6 V power supply.This bandgap reference also has higher than 100 dB PSRR at low frequency,and the start up time of output is about 39 μs.

About this research paper

What this paper is about

In this paper,a novel high precision CMOS bandgap voltage reference which uses a negative back circuit and a RC filter to enhance the PSRR is proposed.Using 1.2 μm BiCMOS process of Beiling,Shanghai,this bandgap voltage reference was designed and simulated.Cadence Spectre simulation results show that this circuit has higher precision and stability,and the output of the bandgap voltage is 1. 254 V.The greatest skew of reference voltage to input voltage is 0.012 mV in the power supply range from 2.7 V to 5.5 V,and the maximum static current of reference is 11.27 μA;the greatest skew of reference voltage to temperature is about 1 mV in the range of-40 ℃～120 ℃;the total current of the bandgap reference is about 10.6 μA with the power dissipation about 38.16 μW at 3.6 V power supply.This bandgap reference also has higher than 100 dB PSRR at low frequency,and the start up time of output is about 39 μs.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

In this paper,a novel high precision CMOS bandgap voltage reference which uses a negative back circuit and a RC filter to enhance the PSRR is proposed.Using 1.2 μm BiCMOS process of Beiling,Shanghai,this bandgap voltage reference was designed and simulated.Cadence Spectre simulation results show that this circuit has higher precision and stability,and the output of the bandgap voltage is 1. 254 V.The greatest skew of reference voltage to input voltage is 0.012 mV in the power supply range from 2.7 V to 5.5 V,and the maximum static current of reference is 11.27 μA;the greatest skew of reference voltage to temperature is about 1 mV in the range of-40 ℃～120 ℃;the total current of the bandgap reference is about 10.6 μA with the power dissipation about 38.16 μW at 3.6 V power supply.This bandgap reference also has higher than 100 dB PSRR at low frequency,and the start up time of output is about 39 μs.

Key concepts: Bandgap voltage reference, Power supply rejection ratio, Voltage reference, Voltage, Line regulation, Silicon bandgap temperature sensor, Electrical engineering, Skew

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Super Performance BiCMOS Band-Gap Voltage Reference — Research Paper | ScholarLens