2000•Gongneng cailiao yu qijian xuebaoRequires access

Characterization of PL mapping for SI-GaAs wafer

Guang Li

Abstract

In this paper, application of PL mapping to characterize SI GaAs crystal has been studied in detail. The experiment results show that PL mapping and its intensity of SI GaAs wafer plays an important role in determining the performance of device. When selecting high quality SI GaAs crystal for fabricating device, PL mapping homogeneity is an important parameter besides resistivity, mobilty, EPD, carbon concentration, EL2 concentration and their homogeneity, wafer surface quality.

About this research paper

What this paper is about

Why it matters

OpenAlex reports 1 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Homogeneity (statistics), Wafer, Materials science, Optoelectronics, Characterization (materials science), Crystal (programming language), Silicon, Nanotechnology