2014•Advanced Technology of Electrical Engineering and EnergyRequires access
Experiment on GaAs PCSS's on-resistance with solid-state planar Blumlein line
Yi Shen, Wei Wang, Yi Liu, Liansheng Xia, Huang Zhang, Jun Zhu, Shi Jinshui, Linwen Zhang
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Abstract
In order to develop the compact pulse power system,the experiment on GaAs photoconductive semiconductor switch( PCSS) 's on-resistance has been studied. With 2mm-thick solid-state planar Blumlein line,GaAs PCSS is triggered with the high power pulse laser diode. GaAs PCSS turned-on the lock-on mode under the pulsed bias voltage. A 22. 3kV high voltage pulse was obtained on load through Blumlein line,which satisfied the design of compact pulse power system. The PCSS's on-resistance of 4. 1Ω was calculated according to bias voltage,output voltage and impedance of Blumlein line. Moreover,the relationship between GaAs PCSS's on-resistance and bias voltage,laser energy were studied under the lock-on mode of PCSS.