ScholarLens Back to search
2008•International Electronic ElementsRequires access

Design of bandgap reference circuit with 0.5μm CMOS process

Lidong Xing

Open publisher page 0 citations

Abstract

A bandgap reference circuit which is based on the bandgap voltage theory using for BLVDS transceiver system is designed with CSMC 0.5μm CMOS technology in this paper.This circuit features low temperature coefficient and high power supply rejection ratio.HSPICE simulation results show that the circuit can obtain a stable output voltage Vref=1.25V when supply voltage is 3.3V and temperature is 25℃.The temperature coefficient of output voltage is 20pm/℃ with a PSRR of-58.3 dB over temperature range from-45℃～+85℃.

About this research paper

What this paper is about

A bandgap reference circuit which is based on the bandgap voltage theory using for BLVDS transceiver system is designed with CSMC 0.5μm CMOS technology in this paper.This circuit features low temperature coefficient and high power supply rejection ratio.HSPICE simulation results show that the circuit can obtain a stable output voltage Vref=1.25V when supply voltage is 3.3V and temperature is 25℃.The temperature coefficient of output voltage is 20pm/℃ with a PSRR of-58.3 dB over temperature range from-45℃～+85℃.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

A bandgap reference circuit which is based on the bandgap voltage theory using for BLVDS transceiver system is designed with CSMC 0.5μm CMOS technology in this paper.This circuit features low temperature coefficient and high power supply rejection ratio.HSPICE simulation results show that the circuit can obtain a stable output voltage Vref=1.25V when supply voltage is 3.3V and temperature is 25℃.The temperature coefficient of output voltage is 20pm/℃ with a PSRR of-58.3 dB over temperature range from-45℃～+85℃.

Key concepts: Bandgap voltage reference, Power supply rejection ratio, Temperature coefficient, Voltage reference, CMOS, Voltage, Silicon bandgap temperature sensor, Materials science

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Design of bandgap reference circuit with 0.5μm CMOS process — Research Paper | ScholarLens