Influence of Multicrystalline Silicon Diffusion Oxide Layer on Solar Cell Performance

Effect of multicrystalline silicon diffusion oxide layer on solar cell performance and the optimum diffusion process were investigated.Minority carrier lifetime on silicon wafer was analyzed by minority carrier lifetime measureing instrument.The results show that minority carrier lifetime on silicon wafer after diffusion reaches the highest value of 10.45μs,which is 5 times longer than that before diffusion,while dry oxygen flow is 2800sccm and square resistance is 60~70Ω/□.The solar battery parallel resistance and short circuit current are also amounts to 40.4Ω and 8522mA,and photoelectric conversion efficiency increases to 16.83% comparing to 16.69% while dry oxygen flow is 2000sccm.Moreover,the effect of diffusion oxide layer on the inner side friction resistance uniformity and minority carrier lifetime was explained.