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STUDY OF EXTERNAL CAVITY SEMICONDUCTOR LASER

ZHANG GUANG-YIN

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Abstract

Some results for external cavity semiconductor laser are reported in this paper. We used a blazed grating as feedback to consist weak coupled external cavity for a cmmercial semiconductor laser at 808nm, improved the output characteristics of the semiconductor laser. For the external cavity semiconductor laser with single longitudinal mode and narrow linewidth, we obtained an output power of 35.4mW and a total optical to optical efficiency of 46%. Its side mode suppression ratio is more than 30dB, and spectrum line width is narrower than 0.06nm. Through turning the blazed grating, the tuning range of wavelength of 11.66nm has been achieved. We designed linkage configuration with a grating and a reflecting mirror to realize that output laser direction dos not changing with the tunable.$$$$

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What this paper is about

Some results for external cavity semiconductor laser are reported in this paper. We used a blazed grating as feedback to consist weak coupled external cavity for a cmmercial semiconductor laser at 808nm, improved the output characteristics of the semiconductor laser. For the external cavity semiconductor laser with single longitudinal mode and narrow linewidth, we obtained an output power of 35.4mW and a total optical to optical efficiency of 46%. Its side mode suppression ratio is more than 30dB, and spectrum line width is narrower than 0.06nm. Through turning the blazed grating, the tuning range of wavelength of 11.66nm has been achieved. We designed linkage configuration with a grating and a reflecting mirror to realize that output laser direction dos not changing with the tunable.$$$$

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Available abstract

Some results for external cavity semiconductor laser are reported in this paper. We used a blazed grating as feedback to consist weak coupled external cavity for a cmmercial semiconductor laser at 808nm, improved the output characteristics of the semiconductor laser. For the external cavity semiconductor laser with single longitudinal mode and narrow linewidth, we obtained an output power of 35.4mW and a total optical to optical efficiency of 46%. Its side mode suppression ratio is more than 30dB, and spectrum line width is narrower than 0.06nm. Through turning the blazed grating, the tuning range of wavelength of 11.66nm has been achieved. We designed linkage configuration with a grating and a reflecting mirror to realize that output laser direction dos not changing with the tunable.$$$$

Key concepts: Laser linewidth, Distributed feedback laser, Optics, Materials science, Laser, Semiconductor laser theory, Semiconductor, Optoelectronics

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