Analysis and Design of Temperature Field of SiCGe Alloy Growth by Hot-wall Chemical Vapor Deposition on SiC Substrates

The induction heating process and temperature distribution of a SiCGe alloy hot-wall chemical vapor deposition (HWCVD) furnace were studied by using the finite element method. The effects of both the number of induction coils and thickness of graphite susceptor on the distribution of magnetic vector potential and temperature are investigated. The calculations suggest that the larger and more homogeneous the Joule heating generate the more of induction coil turns are. By increasing the thickness of graphite susceptor, the heating rate increases, but just the reverse the temperature profiles at graphite susceptor inner wall along the axial direction go from bad to worse. All simulations results indicate that the design parameters can been optimized as 16 turns of coil and 10mm thickness of graphite susceptor.