Wang Qingpin
Abstract
The principle of Si trench etching is introduced, and major press factors to influence etching results are examined. An approach is presented to achieve 1-μp-wide Si trench etching.Process parameters are proposed for etching of 1-μm-wide, 8-μm-deep Si trench with clean and smooth sidewall and bottom.
A significance statement is not available in the OpenAlex record.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
The principle of Si trench etching is introduced, and major press factors to influence etching results are examined. An approach is presented to achieve 1-μp-wide Si trench etching.Process parameters are proposed for etching of 1-μm-wide, 8-μm-deep Si trench with clean and smooth sidewall and bottom.
Key concepts: Trench, Etching (microfabrication), Materials science, Silicon, Optoelectronics, Dry etching, Process (computing), Nanotechnology