2007•Journal of Beijing Electronic Science and Technology InstituteRequires access
Behavioral Modeling and Simulation of MOSFET based on VHDL-AMS
Geng Yanming, Yuan Wang, Jian Zhang, Beijing Beijing
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Abstract
This paper presents a VHDL-AMS behavioral modeling method for the semiconductor devices based on Spice model,and the behavioral model of MOSFET is also provided,including models for temperature effects, noise, DC current and capacitance equations. Finally we take the CMOS inverter circuit as example and make use of the mixed signal simulator SMASH5.5 to verify the behavioral model.