Wei‐Sheng Liu, Jen‐Inn Chyi
Abstract
The influence of InAlAs/InGaAs composite overgrown layer on the optical properties of InAs quantum dots is investigated. Quantum dots with narrow photoluminescence linewidth and wide state-separation at 1.3 /spl mu/m can thus be obtained.
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The influence of InAlAs/InGaAs composite overgrown layer on the optical properties of InAs quantum dots is investigated. Quantum dots with narrow photoluminescence linewidth and wide state-separation at 1.3 /spl mu/m can thus be obtained.
Key concepts: Laser linewidth, Quantum dot, Materials science, Photoluminescence, Optoelectronics, Gallium arsenide, Composite number, Layer (electronics)