Study of the electrical characteristics of merged p-i-n/Schottky (MPS) diode with short drift region

The operation of merged p-i-n/Schottky (MPS) diode involves the interaction of Schottky and p-n junction barriers, which complicates the analytical description of the device. In this paper, the electrical characteristics of MPS are studied by means of numerical simulation. The potential and carrier profiles are presented as functions of applied bias, and the I-V characteristics are presented in terms of various current components (i.e, the Schottky region and the p-i-n region). The results show that the conductivity-modulated region does not extend appreciably upon the current entering into the saturation regime and the overall resistance of the device can be regarded as a constant for the saturation regime.