The Principle and Research Development of Magnetoresistive Random Access Memory

Magnetoresistive Random Access Memory(MRAM) has been recognized as a very broad prospect for the computer memory.The concepts and principles of MRAM,as well as its comparisons with currently common used memories,such as static random access memory(SRAM),dynamic random access memory(DRAM),flash memory(FLASH) were introduced.Practical MRAM is based on the tunneling magnetoresistance(TMR) effect.Therefore,one of the current studies focusing on MRAM is how to improve the traditional TMR materials' performance.Another MRAM research direction is the development of new principles and new structures for the MRAM.The developments of two main types of current MRAM,i.e.,toggle-MRAM and SST-MRAM are produced.