Ohmic Contact of p-GaN Based Devices

Wide band crack GaN with excellent physics and chemical property has becomes one of the semiconductor domain research forces.The p-GaN ohmic contact question has restricted the GaN base devices for further development.This article first introduced the ohmic contact principles and the appraisal methods,then discussed in detail how to realized good p-GaN ohmic contact.The main method are adopts the surface treatment technology,the choice appropriate metal electrode material,carries on hot anneal processing,and the research progresses.Finally pointed out at present exists the question,and will point out the next research direction.