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2006•Journal of MicrowavesRequires access

A New Single-heterojunction InGaP/GaAs HBT Model

Lingling Sun

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Abstract

The applicability of simplified VBIC BJT model for Ⅲ-V compound HBTs modeling is discussed and referenced.Based on VBIC and UCSD HBT model,a new model which can accurately accounts for single-heterojunction InGaP/GaAs HBTs' device is presented and used.Compared results between measured and simulated data verified that,within the frequency range from 50MHz to 20GHz,the model is suitable for single and multi-finger InGaP/GaAs HBTs' AC small-signal characterizations' representation.Using this model,a wideband amplifier's behavior is previowed accurately.

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What this paper is about

The applicability of simplified VBIC BJT model for Ⅲ-V compound HBTs modeling is discussed and referenced.Based on VBIC and UCSD HBT model,a new model which can accurately accounts for single-heterojunction InGaP/GaAs HBTs' device is presented and used.Compared results between measured and simulated data verified that,within the frequency range from 50MHz to 20GHz,the model is suitable for single and multi-finger InGaP/GaAs HBTs' AC small-signal characterizations' representation.Using this model,a wideband amplifier's behavior is previowed accurately.

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Available abstract

The applicability of simplified VBIC BJT model for Ⅲ-V compound HBTs modeling is discussed and referenced.Based on VBIC and UCSD HBT model,a new model which can accurately accounts for single-heterojunction InGaP/GaAs HBTs' device is presented and used.Compared results between measured and simulated data verified that,within the frequency range from 50MHz to 20GHz,the model is suitable for single and multi-finger InGaP/GaAs HBTs' AC small-signal characterizations' representation.Using this model,a wideband amplifier's behavior is previowed accurately.

Key concepts: Heterojunction bipolar transistor, Heterojunction, Bipolar junction transistor, Materials science, Optoelectronics, Amplifier, Small-signal model, Electronic engineering

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