Device structure analysis of CIGS thin film solar cell

The technological factors which strongly influence the properties and efficiency of copper indium gallium diselenide(CIGS) thin film solar cell are reviewed, such as the crystal structure of CIGS semiconductor material, the device structure of CIGS thin film solar cell, the choice of substrate material and the Na-doping of CIGS thin film. And the deposition processes and features of co-evaporation, selenization for growth of CIGS absorption layer and chemical bath deposition for growth of Cd S buffer layer are analyzed. In addition, the roll-to-roll production of the flexible CIGS thin film solar cell is introduced. At last, the challenges in the development and commercial production of CIGS thin film solar cell and the corresponding solutions are analyzed and summarized.