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Infrared Transparent Conductive Films Based on CuAl_xO_y

Junjie Si

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Abstract

This paper presents a novel infrared transparent conductive film based on copper aluminum oxides(CuAlxOy).CuAlxOy films are deposited on the sapphire by reactive magnetron co-sputtering using DC applied to the high-purity Cu target,RF applied to the high-purity Al target.Some influences of films properties are discussed.These influences have included the flow of oxygen gas,the thickness of films,the time of pre-deposition Cu layer etc.It has been found that,by fine-tuning the sputtering parameters and proper control of pre-deposition Cu layer,the films with both reasonably low resistivity and high transmittance can be obtained simultaneously.The best films with a thickness of 1765 has the highest transmission of 62.5% at the wavelength of 2.6 m,and the average transmission of 53% in the IR band(wave number from 8000 to 2000 cm-1).The sheet resistance of the film is as low as 358.9 /sq,which corresponds to a resistivity of 6.33×10-3.cm.

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This paper presents a novel infrared transparent conductive film based on copper aluminum oxides(CuAlxOy).CuAlxOy films are deposited on the sapphire by reactive magnetron co-sputtering using DC applied to the high-purity Cu target,RF applied to the high-purity Al target.Some influences of films properties are discussed.These influences have included the flow of oxygen gas,the thickness of films,the time of pre-deposition Cu layer etc.It has been found that,by fine-tuning the sputtering parameters and proper control of pre-deposition Cu layer,the films with both reasonably low resistivity and high transmittance can be obtained simultaneously.The best films with a thickness of 1765 has the highest transmission of 62.5% at the wavelength of 2.6 m,and the average transmission of 53% in the IR band(wave number from 8000 to 2000 cm-1).The sheet resistance of the film is as low as 358.9 /sq,which corresponds to a resistivity of 6.33×10-3.cm.

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Available abstract

This paper presents a novel infrared transparent conductive film based on copper aluminum oxides(CuAlxOy).CuAlxOy films are deposited on the sapphire by reactive magnetron co-sputtering using DC applied to the high-purity Cu target,RF applied to the high-purity Al target.Some influences of films properties are discussed.These influences have included the flow of oxygen gas,the thickness of films,the time of pre-deposition Cu layer etc.It has been found that,by fine-tuning the sputtering parameters and proper control of pre-deposition Cu layer,the films with both reasonably low resistivity and high transmittance can be obtained simultaneously.The best films with a thickness of 1765 has the highest transmission of 62.5% at the wavelength of 2.6 m,and the average transmission of 53% in the IR band(wave number from 8000 to 2000 cm-1).The sheet resistance of the film is as low as 358.9 /sq,which corresponds to a resistivity of 6.33×10-3.cm.

Key concepts: Materials science, Sheet resistance, Electrical resistivity and conductivity, Transmittance, Sapphire, Deposition (geology), Sputtering, Layer (electronics)

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