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Anasysis of the Key Parameters in Lithography Process

Jiang Ya-dong

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Abstract

The normal processes of the photolithography were introduced in this paper,and also some parameters in the process of lithography and main factors effecting the quality of pattern were discussed.The photoresist thickness at two different rotation speeds,film uniformity and stay rate of two different photoresist are analysised in detail.And then some solutions for some common problems in lithography process were provided in this article.At last the optimal lithography process parameters of AZ3100 and AZ703 will be established through experiments.

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What this paper is about

The normal processes of the photolithography were introduced in this paper,and also some parameters in the process of lithography and main factors effecting the quality of pattern were discussed.The photoresist thickness at two different rotation speeds,film uniformity and stay rate of two different photoresist are analysised in detail.And then some solutions for some common problems in lithography process were provided in this article.At last the optimal lithography process parameters of AZ3100 and AZ703 will be established through experiments.

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Available abstract

The normal processes of the photolithography were introduced in this paper,and also some parameters in the process of lithography and main factors effecting the quality of pattern were discussed.The photoresist thickness at two different rotation speeds,film uniformity and stay rate of two different photoresist are analysised in detail.And then some solutions for some common problems in lithography process were provided in this article.At last the optimal lithography process parameters of AZ3100 and AZ703 will be established through experiments.

Key concepts: Photolithography, Computational lithography, Lithography, Photoresist, Computer science, X-ray lithography, Next-generation lithography, Process (computing)

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