Xiangdong Luo
Abstract
Carrier dynamics properties of localized and delocalized states in GaNxAs1-x are studied by time-resolved photoluminescence technique.The experimental results exhibit fully the carrier dynamics characteristics of the delocalized states by comparing the difference between localized and delocalized states in GaNxAs1-x.
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Carrier dynamics properties of localized and delocalized states in GaNxAs1-x are studied by time-resolved photoluminescence technique.The experimental results exhibit fully the carrier dynamics characteristics of the delocalized states by comparing the difference between localized and delocalized states in GaNxAs1-x.
Key concepts: Delocalized electron, Photoluminescence, Materials science, Dynamics (music), X-ray absorption spectroscopy, Chemical physics, Condensed matter physics, Optoelectronics