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2016•Measurement & Control TechnologyRequires access

A Novel High Power IGBT Driver Circuit with Variable Gate Resistance

Yixin Gu

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Abstract

By analyzing the parasitic parameters of high power IGBT and main power circuit,a novel driving circuit based on the variable gate resistances is put forward.This method can improve the compatibility of the drive module,realize accurate control of the drive of IGBT switching characteristics,and effectively reduce the voltage spikes through switching process due to the di/dt.In the end,the simulation model of IGBT is built in Sabor,and a double pulse experiment is completed based on the platform of FZ1500R33HE3.Simulation and experiment results show the feasibility of the driving circuit.

About this research paper

What this paper is about

By analyzing the parasitic parameters of high power IGBT and main power circuit,a novel driving circuit based on the variable gate resistances is put forward.This method can improve the compatibility of the drive module,realize accurate control of the drive of IGBT switching characteristics,and effectively reduce the voltage spikes through switching process due to the di/dt.In the end,the simulation model of IGBT is built in Sabor,and a double pulse experiment is completed based on the platform of FZ1500R33HE3.Simulation and experiment results show the feasibility of the driving circuit.

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Available abstract

By analyzing the parasitic parameters of high power IGBT and main power circuit,a novel driving circuit based on the variable gate resistances is put forward.This method can improve the compatibility of the drive module,realize accurate control of the drive of IGBT switching characteristics,and effectively reduce the voltage spikes through switching process due to the di/dt.In the end,the simulation model of IGBT is built in Sabor,and a double pulse experiment is completed based on the platform of FZ1500R33HE3.Simulation and experiment results show the feasibility of the driving circuit.

Key concepts: Insulated-gate bipolar transistor, Gate driver, Driver circuit, Electrical engineering, Power (physics), Parasitic element, Voltage, Engineering

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