A Comparison of Ionizing Radiation Damage in NMOSFET Device from Different Radiation Resources and Different Dose Rate ~(60)Co Gamma Rays

N-channel MOS transistors from CC4007,CC4011 and LC54HC04RH device were irradiated with different dose rate Co-60 gamma rays,lower energy protons(less then 9MeV)and 1MeV electrons.According to the result,under 5V bias conditions during radiation,the damage for protons below 9MeV was always less then Co-60.The lower the proton energy,the less the damage.Comparison of electrons to Co-60 showed that for equal absorbed doses,the damage produced was almost equivalent.At higher dose rate Co-60 gamma rays radiation environment,the oxide trapped charges by the irradiation was main reason to induce device failure.when approaching the of low dose irradiation environment,interface trapped charges by the irradiation was the main reason to induce the LC54HC04RH failure.The main reason for CC4007 device failure was the oxide trapped charges by the irradiation.