2012Unpublished venueRequires access

A CMOS Bandgap Reference Voltage Source with 2~(nd)-Order Compensation

Lei Shao

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Abstract

A low temperature coefficient bandgap reference source with 2nd-order compensation was designed using CSMC 0.5 μm CMOS process.The circuit was based on conventional bandgap source with amplifier-feedback architecture,and basic theory of the square relationship between saturation current and over-drive voltage was used to generate a 2nd-order compensation parameter.The circuit was simple for implementation and easily compatible with conventional bandgap circuit.Simulation results indicated that circuit had a power dissipation of 860 μW at 5 V power supply,a minimum operating of 1.24 V,a temperature coefficient of 1.42×10-5 /℃ in temperature range from-50 ℃ to 125 ℃,and a PSRR of-86.3 dB at low frequency.

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What this paper is about

A low temperature coefficient bandgap reference source with 2nd-order compensation was designed using CSMC 0.5 μm CMOS process.The circuit was based on conventional bandgap source with amplifier-feedback architecture,and basic theory of the square relationship between saturation current and over-drive voltage was used to generate a 2nd-order compensation parameter.The circuit was simple for implementation and easily compatible with conventional bandgap circuit.Simulation results indicated that circuit had a power dissipation of 860 μW at 5 V power supply,a minimum operating of 1.24 V,a temperature coefficient of 1.42×10-5 /℃ in temperature range from-50 ℃ to 125 ℃,and a PSRR of-86.3 dB at low frequency.

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Available abstract

A low temperature coefficient bandgap reference source with 2nd-order compensation was designed using CSMC 0.5 μm CMOS process.The circuit was based on conventional bandgap source with amplifier-feedback architecture,and basic theory of the square relationship between saturation current and over-drive voltage was used to generate a 2nd-order compensation parameter.The circuit was simple for implementation and easily compatible with conventional bandgap circuit.Simulation results indicated that circuit had a power dissipation of 860 μW at 5 V power supply,a minimum operating of 1.24 V,a temperature coefficient of 1.42×10-5 /℃ in temperature range from-50 ℃ to 125 ℃,and a PSRR of-86.3 dB at low frequency.

Key concepts: Bandgap voltage reference, Power supply rejection ratio, Temperature coefficient, CMOS, Silicon bandgap temperature sensor, Materials science, Voltage, Electrical engineering

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