MEASUREMENT OF INDENTATION HARDNESS OF SINGLE CRYSTAL SILICON BY THE WORK-OF-INDENTATION METHOD

In material micro/nano hardness testing,it was found that the hardness value is observably affected by material pile-up at the edges of indents.The hardness can be recalculated and revised by work-of-indentation methods.The work-of-indentation process can be directly obtained by the load-depth curve,and the plastic volume of the indentation can be obtained by atomic force micros-copy and Matlab software.A single crystal silicon was used for indentation hardness experiments and its hardness was obtained by the work-of-indentation method.The result indicates that compared with other methods,the work-of-indentation method produces more stable hardness that is less sensitive to the effect of pile-up.