Growth and Microanalysis of Thick Oxidized Porous Silicon

Oxidizing thick porous silicon into silicon dioxide is a time saving and low cost process for producing thick silicon dioxide layer used in silicon based optical waveguide devices.Thickness, surface roughness and composition are three important parameters and are analyzed by SEM, AFM and Auger, giving the results of 21 2μm in thickness, of 1nm in surface roughness and of 1/1 906 in ratio of silicon to oxygen. These indicate that oxidized porous silicon can meet the requirements for low loss waveguide devices.