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Fabrication of SiC matrix composites reinforced by carbon cloth using CSCVI method and microstructure

Peng Fei Xiao

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Abstract

In order to increase the densification rate of C/SiC composites fabricated by CVI process, a continuous synchronous chemical vapor infiltration (CSCVI) technologic route for fabrication of C/SiC composites reinforced by carbon cloth was brought forward. C/SiC composites were fabricated, and their microstructure were observed and analyzed. The results indicate that, in CSCVI process, deposition rate of SiC matrix is faster, therefore the densification degree is greater and SiC solid is more uniform. At the same time, that deposition rate of SiC is controlled only by the deposition temperature and the MTS (CH 3SiCl 3) flux enhances the maneuverability of CSCVI process, and enlarges the variety range of processing parameters.

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What this paper is about

In order to increase the densification rate of C/SiC composites fabricated by CVI process, a continuous synchronous chemical vapor infiltration (CSCVI) technologic route for fabrication of C/SiC composites reinforced by carbon cloth was brought forward. C/SiC composites were fabricated, and their microstructure were observed and analyzed. The results indicate that, in CSCVI process, deposition rate of SiC matrix is faster, therefore the densification degree is greater and SiC solid is more uniform. At the same time, that deposition rate of SiC is controlled only by the deposition temperature and the MTS (CH 3SiCl 3) flux enhances the maneuverability of CSCVI process, and enlarges the variety range of processing parameters.

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Available abstract

In order to increase the densification rate of C/SiC composites fabricated by CVI process, a continuous synchronous chemical vapor infiltration (CSCVI) technologic route for fabrication of C/SiC composites reinforced by carbon cloth was brought forward. C/SiC composites were fabricated, and their microstructure were observed and analyzed. The results indicate that, in CSCVI process, deposition rate of SiC matrix is faster, therefore the densification degree is greater and SiC solid is more uniform. At the same time, that deposition rate of SiC is controlled only by the deposition temperature and the MTS (CH 3SiCl 3) flux enhances the maneuverability of CSCVI process, and enlarges the variety range of processing parameters.

Key concepts: Materials science, Microstructure, Fabrication, Chemical vapor infiltration, Composite material, Chemical vapor deposition, Deposition (geology), Carbon fibers

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