Exciton Energies in Wurtzite GaN/AlN Infinite Quantum Well

The ground state energy and binding energy of an exciton in a wurtzite GaN/AlN infinite quantum well are calculated by an improved LLP variational method.The ground state energy and the binding energy in a wurtzite GaN/AlN quantum well are compared with the results in a Zinc blende quantum well.The results show that the ground state energy and binding energy of exciton in a wurtzite GaN/AlN quantum well decrease when the well width increases;and the energy decreases rapidly at a narrow well,then decreases slowly and is close to the values of an exciton in three-dimensional GaN materials at large well width.The ground state energy and binding energy of an exciton with the effect of polaron are significantly smaller than the results of a bare exciton,and the contribution from the electron-phonon interaction to the energy of an exciton is obvious.The ground state energy in a wurtzite GaN/AlN quantum well is smaller than those of a Zinc blende GaN/AlN quantum well,the binding energy of an exciton in wurtzite GaN/AlN quantum well is larger than those of a Zinc blende GaN/AlN quantum well.The wider the well width is,the smaller the ground state energy and binding energy differences between the wurtzite GaN/AlN quantum well and the Zinc blende GaN/AlN quantum well become.