2012Cailiao kexue yu gongcheng xuebaoRequires access

Sintering and Characterization of W-Ti Co-doped ZnO Targets

Ying Zhao

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Abstract

To obtain low resistivity targets,W and Ti co-doped ZnO targets(WTZO) were prepared by pressure-less sintering technique.It based on the theory of high valence difference between dopant and ion substituted.Meanwhile,the influence of sintering temperature and atmosphere on the properties of WTZO targets were investigated in detail.It is indicated that the properties of WTZO targets are better when they are sintered at 1200℃.With the increase of temperature,the relative density of WTZO targets increases rapidly and then decreases slowly,while the sheet resistance decreases and then increases slowly.In addition,sintering atmosphere makes a great inference on the properties of WTZO targets.When the sintering atmosphere is air,the WTZO targets with sheet resistance,RS~12.18Ω/□ and relative density,RD~94.3% were gained.Typical performances of WTZO targets obtained in argon gas: sheet resistance,RS~1.253Ω/□ and relative density,RD~96.7%.

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To obtain low resistivity targets,W and Ti co-doped ZnO targets(WTZO) were prepared by pressure-less sintering technique.It based on the theory of high valence difference between dopant and ion substituted.Meanwhile,the influence of sintering temperature and atmosphere on the properties of WTZO targets were investigated in detail.It is indicated that the properties of WTZO targets are better when they are sintered at 1200℃.With the increase of temperature,the relative density of WTZO targets increases rapidly and then decreases slowly,while the sheet resistance decreases and then increases slowly.In addition,sintering atmosphere makes a great inference on the properties of WTZO targets.When the sintering atmosphere is air,the WTZO targets with sheet resistance,RS~12.18Ω/□ and relative density,RD~94.3% were gained.Typical performances of WTZO targets obtained in argon gas: sheet resistance,RS~1.253Ω/□ and relative density,RD~96.7%.

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Available abstract

To obtain low resistivity targets,W and Ti co-doped ZnO targets(WTZO) were prepared by pressure-less sintering technique.It based on the theory of high valence difference between dopant and ion substituted.Meanwhile,the influence of sintering temperature and atmosphere on the properties of WTZO targets were investigated in detail.It is indicated that the properties of WTZO targets are better when they are sintered at 1200℃.With the increase of temperature,the relative density of WTZO targets increases rapidly and then decreases slowly,while the sheet resistance decreases and then increases slowly.In addition,sintering atmosphere makes a great inference on the properties of WTZO targets.When the sintering atmosphere is air,the WTZO targets with sheet resistance,RS~12.18Ω/□ and relative density,RD~94.3% were gained.Typical performances of WTZO targets obtained in argon gas: sheet resistance,RS~1.253Ω/□ and relative density,RD~96.7%.

Key concepts: Sintering, Materials science, Relative density, Sheet resistance, Doping, Dopant, Electrical resistivity and conductivity, Valence (chemistry)

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