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2010•Unpublished venueRequires access

Valence Band of Strained Si/(001)Si_(1-x)Ge_x

Jianjun Song

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Abstract

There has been a lot of interest in the strained Si CMOS technology lately,which has been widely adopted in the high-speed and high-performance devices and circuits.Based on the valence band E(k)-k relation of strained Si/(001)Si1-xGex,the valence band and hole effective mass along and directions were obtained.It was found that in comparison with relaxed Si,the valence band edge degeneracy was partially lifted,the asymmetry valence band structures along and directions occured and the corresponding hole effective masses changed with increasing Ge fraction due to strain.The results can supply valuable references to the investigation in the Si-based strained PMOS devices and the conduction channel design related to stress and orientation.

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What this paper is about

There has been a lot of interest in the strained Si CMOS technology lately,which has been widely adopted in the high-speed and high-performance devices and circuits.Based on the valence band E(k)-k relation of strained Si/(001)Si1-xGex,the valence band and hole effective mass along and directions were obtained.It was found that in comparison with relaxed Si,the valence band edge degeneracy was partially lifted,the asymmetry valence band structures along and directions occured and the corresponding hole effective masses changed with increasing Ge fraction due to strain.The results can supply valuable references to the investigation in the Si-based strained PMOS devices and the conduction channel design related to stress and orientation.

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Available abstract

There has been a lot of interest in the strained Si CMOS technology lately,which has been widely adopted in the high-speed and high-performance devices and circuits.Based on the valence band E(k)-k relation of strained Si/(001)Si1-xGex,the valence band and hole effective mass along and directions were obtained.It was found that in comparison with relaxed Si,the valence band edge degeneracy was partially lifted,the asymmetry valence band structures along and directions occured and the corresponding hole effective masses changed with increasing Ge fraction due to strain.The results can supply valuable references to the investigation in the Si-based strained PMOS devices and the conduction channel design related to stress and orientation.

Key concepts: PMOS logic, Valence band, Materials science, Effective mass (spring–mass system), Valence (chemistry), CMOS, Optoelectronics, Conduction band

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