2005•IEEE Transactions on Power ElectronicsRequires access

Development of Φ100 Fast Switching Thyristors

LI Yu-ling

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Abstract

This paper describes optimum design and manufacture of the most powerful fast switching thyristors in the world. By computer simulation,a low concentration profile in space charging region,slow gradient for blocking junction and critical narrow-base structure are formed. Tested parameters of the devices produced show the best compromise of blocking-voltage, on-state voltage drop and turn-off time.

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This paper describes optimum design and manufacture of the most powerful fast switching thyristors in the world. By computer simulation,a low concentration profile in space charging region,slow gradient for blocking junction and critical narrow-base structure are formed. Tested parameters of the devices produced show the best compromise of blocking-voltage, on-state voltage drop and turn-off time.

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Available abstract

This paper describes optimum design and manufacture of the most powerful fast switching thyristors in the world. By computer simulation,a low concentration profile in space charging region,slow gradient for blocking junction and critical narrow-base structure are formed. Tested parameters of the devices produced show the best compromise of blocking-voltage, on-state voltage drop and turn-off time.

Key concepts: Thyristor, Blocking (statistics), Fast switching, Voltage, Voltage drop, Electrical engineering, Commutation, Switching time

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