High rate deposition of microcrystalline silicon thin films by VHF-PECVD
Yuling Liu
Abstract
Yuling Liu
Abstract
Microcrystalline silicon(μc-Si:H) is commonly regarded as the next generation material for Si-based thin film solar cell.In this paper,we achieved high rate deposition of microcrystalline silicon thin films by VHF-PECVD working at high pressure and high power(hphP).Determine the best deposition parameters.Under these deposition parameters,the hphP films showed better optical and electrical properties.The deposition rate,photoconductivity dark conductivity,photosensitivity were tested.The result showed that we got a way of depositing microcrystalline silicon thin films which is more suitable for manufacturing the solar cells with outstanding optical and electrical properties.And the deposition rate is 15.8 nm/s.
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Microcrystalline silicon(μc-Si:H) is commonly regarded as the next generation material for Si-based thin film solar cell.In this paper,we achieved high rate deposition of microcrystalline silicon thin films by VHF-PECVD working at high pressure and high power(hphP).Determine the best deposition parameters.Under these deposition parameters,the hphP films showed better optical and electrical properties.The deposition rate,photoconductivity dark conductivity,photosensitivity were tested.The result showed that we got a way of depositing microcrystalline silicon thin films which is more suitable for manufacturing the solar cells with outstanding optical and electrical properties.And the deposition rate is 15.8 nm/s.
Key concepts: Plasma-enhanced chemical vapor deposition, Microcrystalline silicon, Materials science, Microcrystalline, Deposition (geology), Thin film, Silicon, Photoconductivity