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Low-noise CMOS charge-sensitive preamplifier

Yinong Liu

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Abstract

A low-noise CMOS charge sensitive preamplifier was built using a 0.6 μm CMOS process to achieve the readout density requirement for radiation detectors.The preamplifier costs were(260 μm)×210 μm in area and 15.9 mW in power consumption.The density was increased by a factor of at least 3 orders of magnitude compared to traditional charge sensitive preamplifiers.Measured results show that the equivalent noise charge is(1 377.1 e) of zero-capacitance noise and 43.7 e/pF of capacitance ratio with a shaping time of 1 μs.This noise level is in agreement with theoretical analysis but needs to be improved further.The 1/f noise coefficient of the NMOS device in the process was also calculated.

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What this paper is about

A low-noise CMOS charge sensitive preamplifier was built using a 0.6 μm CMOS process to achieve the readout density requirement for radiation detectors.The preamplifier costs were(260 μm)×210 μm in area and 15.9 mW in power consumption.The density was increased by a factor of at least 3 orders of magnitude compared to traditional charge sensitive preamplifiers.Measured results show that the equivalent noise charge is(1 377.1 e) of zero-capacitance noise and 43.7 e/pF of capacitance ratio with a shaping time of 1 μs.This noise level is in agreement with theoretical analysis but needs to be improved further.The 1/f noise coefficient of the NMOS device in the process was also calculated.

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Available abstract

A low-noise CMOS charge sensitive preamplifier was built using a 0.6 μm CMOS process to achieve the readout density requirement for radiation detectors.The preamplifier costs were(260 μm)×210 μm in area and 15.9 mW in power consumption.The density was increased by a factor of at least 3 orders of magnitude compared to traditional charge sensitive preamplifiers.Measured results show that the equivalent noise charge is(1 377.1 e) of zero-capacitance noise and 43.7 e/pF of capacitance ratio with a shaping time of 1 μs.This noise level is in agreement with theoretical analysis but needs to be improved further.The 1/f noise coefficient of the NMOS device in the process was also calculated.

Key concepts: Preamplifier, NMOS logic, CMOS, Capacitance, Noise (video), Noise spectral density, Electrical engineering, Physics

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