2007•Gongneng cailiao yu qijian xuebaoRequires access

Inductively coupled plasma etching of InP

Shan Jiang

Abstract

Inductively coupled plasma(ICP) dry etching of InP was performed using Cl2/CH4/N2.The effects of RF power,ICP power,Process pressure,the flow rate are thoroughly discussed.By adjusting etching parameters,vertical sidewall and smooth surface can be obtained.The etch rate is 841 nm/min,and the selectivity ratio over SiO2 is estimated to be higher than 15:1.

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Key concepts: Materials science, Inductively coupled plasma, Etching (microfabrication), Dry etching, Plasma, Volumetric flow rate, Analytical Chemistry (journal), Reactive-ion etching