Study of surface nitriding on uranium by plasma immersion ion implantation

Plasma Immersion Ion Implantation(PIII) was used to achieve uranium nitriding.The results show that,temperature and width of implantation pulse are key parameters.With increasing PIII temperature,the depth of nitride layer increases.Auger Electron Spectrum(AES) was used to study the PIII parameters and depth of nitriding layer.The depth of nitriding layer is enhanced while the width of PIII pulse increases.With other parameters fixedness,the nitriding layer depth by pulse of 60μs is much more than that by 40μs,and pulse of 80μs makes depth of nitriding almost decuple of depth by nitrogen ion implantation.PIII voltage has less influence to nitriding depth,but increases the retained dose of nitrogen.