EFFECT OF BAND GAP ON THE DISTRIBUTION OF ELECTRONS AND HOLES IN SEMICONDUCTORS
Ma Yin
Abstract
Ma Yin
Abstract
In this paper,based on considering characteristics of band gap,distribution for electrons and holes of semiconductor was discussed.Take Si example,probability-temperature of electrons occupied conduction band bottom with different energy and probability-energy of electrons occupied conduction band bottom at different temperature are given by MATLAB.It is found that most electrons of conduction band distribute near the bottom and most holes of valence band distribute near the top.The probability of the conduction band bottom energy occupied by electrons increases about four to five times with the temperature increasing by 20 K.The probability of the conduction band bottom energy occupied by electrons decreases about 1/2 with the energy increasing by 0.02 eV.
A significance statement is not available in the OpenAlex record.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
In this paper,based on considering characteristics of band gap,distribution for electrons and holes of semiconductor was discussed.Take Si example,probability-temperature of electrons occupied conduction band bottom with different energy and probability-energy of electrons occupied conduction band bottom at different temperature are given by MATLAB.It is found that most electrons of conduction band distribute near the bottom and most holes of valence band distribute near the top.The probability of the conduction band bottom energy occupied by electrons increases about four to five times with the temperature increasing by 20 K.The probability of the conduction band bottom energy occupied by electrons decreases about 1/2 with the energy increasing by 0.02 eV.
Key concepts: Electron, Quasi Fermi level, Band gap, Thermal conduction, Semimetal, Semiconductor, Direct and indirect band gaps, Condensed matter physics