2010Journal of Inorganic MaterialsRequires access

Influence of Annealing Process on the Photostimulated Luminescence Properties of CsBr:Eu~(2+)

Zhao Li

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Abstract

CsBr:Eu2+ powders were prepared by solid-state reaction.The photostimulated luminescence(PSL)spectra,the differential absorption spectra(DAS)and PSL lifetime spectra were systematically investigated.The results reveal the annealing process can increase the PSL intensity and decrease the PSL lifetime.The relationship between the annealing atmosphere and PSL properties were discussed in detail,and the results reveal that substitutional oxygen ions Os-(S:substitute,O-substitute for Br-)and interstitial hydrogen atoms H io are formed in the annealing process.All of Os-,H io and H o2i are electron trap centers,which are closely related to the formation of hole traps centers.

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What this paper is about

CsBr:Eu2+ powders were prepared by solid-state reaction.The photostimulated luminescence(PSL)spectra,the differential absorption spectra(DAS)and PSL lifetime spectra were systematically investigated.The results reveal the annealing process can increase the PSL intensity and decrease the PSL lifetime.The relationship between the annealing atmosphere and PSL properties were discussed in detail,and the results reveal that substitutional oxygen ions Os-(S:substitute,O-substitute for Br-)and interstitial hydrogen atoms H io are formed in the annealing process.All of Os-,H io and H o2i are electron trap centers,which are closely related to the formation of hole traps centers.

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Available abstract

CsBr:Eu2+ powders were prepared by solid-state reaction.The photostimulated luminescence(PSL)spectra,the differential absorption spectra(DAS)and PSL lifetime spectra were systematically investigated.The results reveal the annealing process can increase the PSL intensity and decrease the PSL lifetime.The relationship between the annealing atmosphere and PSL properties were discussed in detail,and the results reveal that substitutional oxygen ions Os-(S:substitute,O-substitute for Br-)and interstitial hydrogen atoms H io are formed in the annealing process.All of Os-,H io and H o2i are electron trap centers,which are closely related to the formation of hole traps centers.

Key concepts: Photostimulated luminescence, PSL, Annealing (glass), Materials science, Luminescence, Ion, Spectral line, Photoluminescence

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