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ChemInform Abstract: GROWTH OF SINGLE‐CRYSTALLINE EPITAXIAL GROUP II FLUORIDE FILMS ON INDIUM PHOSPHIDE(001) BY MOLECULAR‐BEAM EPITAXY

C. W. Tu, T. T. Sheng, M. H. Read, A. R. Schlier, J. G. Johnson, W. D. Johnston, W. A. Bonner

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Abstract

Abstract Das MBE‐Wachstum von dielektrischen MF2‐Filmen (M: Ba, Sr, Ca oder BaxSr1‐x) wurde durch Elektronenbeugung (RHEED) untersucht.

About this research paper

What this paper is about

Abstract Das MBE‐Wachstum von dielektrischen MF2‐Filmen (M: Ba, Sr, Ca oder BaxSr1‐x) wurde durch Elektronenbeugung (RHEED) untersucht.

Why it matters

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Method / approach

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Available abstract

Abstract Das MBE‐Wachstum von dielektrischen MF2‐Filmen (M: Ba, Sr, Ca oder BaxSr1‐x) wurde durch Elektronenbeugung (RHEED) untersucht.

Key concepts: Reflection high-energy electron diffraction, Epitaxy, Molecular beam epitaxy, Indium, Group (periodic table), Crystallography, Fluoride, Materials science

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ChemInform Abstract: GROWTH OF SINGLE‐CRYSTALLINE EPITAXIAL GROUP II FLUORIDE FILMS ON INDIUM PHOSPHIDE(001) BY MOLECULAR‐BEAM EPITAXY — Research Paper | ScholarLens