2006Unpublished venueRequires access

Low Insertion Loss, High-Speed Silicon Electro-Optic Modulator Design

Fuwan Gan, Franz X. Kärtner

Open publisher page 3 citations

Abstract

A high-speed CMOS-compatible Mach-Zehnder electro-optic modulator with graded doping profile for minimum optical loss and maximum modulation speed is investigated, with operating frequency 32GHz, low insertion loss of 3dB and low figure of merit VπL=6Vmm.

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What this paper is about

A high-speed CMOS-compatible Mach-Zehnder electro-optic modulator with graded doping profile for minimum optical loss and maximum modulation speed is investigated, with operating frequency 32GHz, low insertion loss of 3dB and low figure of merit VπL=6Vmm.

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OpenAlex reports 3 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A high-speed CMOS-compatible Mach-Zehnder electro-optic modulator with graded doping profile for minimum optical loss and maximum modulation speed is investigated, with operating frequency 32GHz, low insertion loss of 3dB and low figure of merit VπL=6Vmm.

Key concepts: Insertion loss, Electro-optic modulator, Materials science, Figure of merit, Optics, Optical modulator, CMOS, Modulation (music)

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