2001•The Journal of The Institute of Image Information and Television EngineersOpen access
Image Sensing Technology. A CMOS Image Sensor with a Simple FPN-Reduction Technology and a Hole Accumulated Diode.
K. Yonemoto, Hirofumi Sumi, Ryoji Suzuki, Takahisa Ueno, Keiji Mabuchi
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Abstract
We have developed a CMOS active pixel sensor to be used as a key device for capturing image information. A hole accumulated diode (HAD), which is widely used for CCD image sensors, incorporated into the sensor reduces the dark current more than does a PN photodiode. The HAD was redesigned to be suitable for CMOS processes, in particular to prevent image lags at low voltage operation and to improve the sensitivity of wavelengths from green to red. The combination of a five-transistor pixel circuit and a correlated double-sampling circuit at the output stage dramatically reduces the fixed-pattern noise. A 1/3-type 330 k-pixel VGA-format CMOS image sensor had low noise and high sensitivity characteristics.
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