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Surface degradation mechanism of InP/InGaAs APDs

H. Sudo, M. Suzuki, Norio Miyahara

Abstract

InP/InGaAs avalanche photodiodes (APDs) hold considerable promise as receivers for long-haul high-bit-rate optical communication systems. There have been a few preliminary reports on their reliability,1,2 but the failure mode and mechanism are not yet clear. We describe the course of surface degradation of InP/InGaAs APDs and propose the failure mechanism involved.

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Available abstract

Key concepts: APDS, Avalanche photodiode, Degradation (telecommunications), Indium gallium arsenide, Optoelectronics, Gallium arsenide, Reliability (semiconductor), Mechanism (biology)