2000Japanese Journal of Applied PhysicsOpen access

Photoluminescence Excitation Spectra of CuGaSe2

Satoshi Ohe, Shuichi Takata, Kazuki Wakita, Nobuyuki Yamamoto

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Abstract

Photoluminescence excitation (PLE) spectra have been examined for the first time on CuGaSe2 crystals using a tunable laser as an excitation source. Free exciton peaks of PLE spectra are clearly observed on crystals grown by the iodine vapor transport method (IT) and the traveling heater method (THM). For IT crystals the activation energies for donor levels and acceptor levels are estimated to 100 meV and 65 meV, respectively, whereas for THM crystals containing 1 at% of In atoms, 80 meV and 50 meV, respectively.

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Photoluminescence excitation (PLE) spectra have been examined for the first time on CuGaSe2 crystals using a tunable laser as an excitation source. Free exciton peaks of PLE spectra are clearly observed on crystals grown by the iodine vapor transport method (IT) and the traveling heater method (THM). For IT crystals the activation energies for donor levels and acceptor levels are estimated to 100 meV and 65 meV, respectively, whereas for THM crystals containing 1 at% of In atoms, 80 meV and 50 meV, respectively.

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Available abstract

Photoluminescence excitation (PLE) spectra have been examined for the first time on CuGaSe2 crystals using a tunable laser as an excitation source. Free exciton peaks of PLE spectra are clearly observed on crystals grown by the iodine vapor transport method (IT) and the traveling heater method (THM). For IT crystals the activation energies for donor levels and acceptor levels are estimated to 100 meV and 65 meV, respectively, whereas for THM crystals containing 1 at% of In atoms, 80 meV and 50 meV, respectively.

Key concepts: Photoluminescence, Exciton, Excitation, Photoluminescence excitation, Spectral line, Acceptor, Materials science, Analytical Chemistry (journal)

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