1970Journal of the Japan Society of Precision EngineeringOpen access

Electropolishing of GaAs

Shigeyuki IIYAMA, Ichiro IDA, Shun'ichi FURUMOTO

Open full text 0 citations

Abstract

In order to find out the mirror-finish conditions for GaAs substrates with non-damage, which are used for diodes in ultra high frequencies with very high speeds, a disc type electro-polishing machine is made trially, and the suitable electrolytes, polishing conditions and stock removals are pursued from the viewpoint of surface quality. The results obtained are as follows : (1) The electrolytes suitable for the disc type electropolishing are 0.25% KON or NaOH with the same concentration. (2) Roughness of 0.02μ in maximum height, independent of crystal orientations, is obtained with the finishing rate from 3 to 6times as high as that of chemical polishing in the case of p-type materials. (3) Electrochemical approaches are necessary for polishing ntype materials electrolytically due to their inferior roughness of 0.1μ. (4) Clear Kikuchi's lines are found to be exposed on the electropolished surfaces according to the estimation by electron diffraction.

Open-access reader

About this research paper

What this paper is about

In order to find out the mirror-finish conditions for GaAs substrates with non-damage, which are used for diodes in ultra high frequencies with very high speeds, a disc type electro-polishing machine is made trially, and the suitable electrolytes, polishing conditions and stock removals are pursued from the viewpoint of surface quality. The results obtained are as follows : (1) The electrolytes suitable for the disc type electropolishing are 0.25% KON or NaOH with the same concentration. (2) Roughness of 0.02μ in maximum height, independent of crystal orientations, is obtained with the finishing rate from 3 to 6times as high as that of chemical polishing in the case of p-type materials. (3) Electrochemical approaches are necessary for polishing ntype materials electrolytically due to their inferior roughness of 0.1μ. (4) Clear Kikuchi's lines are found to be exposed on the electropolished surfaces according to the estimation by electron diffraction.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

In order to find out the mirror-finish conditions for GaAs substrates with non-damage, which are used for diodes in ultra high frequencies with very high speeds, a disc type electro-polishing machine is made trially, and the suitable electrolytes, polishing conditions and stock removals are pursued from the viewpoint of surface quality. The results obtained are as follows : (1) The electrolytes suitable for the disc type electropolishing are 0.25% KON or NaOH with the same concentration. (2) Roughness of 0.02μ in maximum height, independent of crystal orientations, is obtained with the finishing rate from 3 to 6times as high as that of chemical polishing in the case of p-type materials. (3) Electrochemical approaches are necessary for polishing ntype materials electrolytically due to their inferior roughness of 0.1μ. (4) Clear Kikuchi's lines are found to be exposed on the electropolished surfaces according to the estimation by electron diffraction.

Key concepts: Polishing, Electropolishing, Materials science, Surface roughness, Surface finish, Anode, Electrolyte, Metallurgy

Related papers

Back to paper searchBrowse research topicsOriginal source
Electropolishing of GaAs — Research Paper | ScholarLens