ScholarLens Back to search
2013•Nano LettersRequires access

Graphene for True Ohmic Contact at Metal–Semiconductor Junctions

Kyung‐Eun Byun, Hyun‐Jong Chung, Jaeho Lee, Heejun Yang, Hyun Jae Song, Jinseong Heo, David H. Seo, Seong-Jun Park, Sung Woo Hwang, In-Kyeong Yoo, Kinam Kim

Open publisher page 120 citations

Abstract

The rectifying Schottky characteristics of the metal-semiconductor junction with high contact resistance have been a serious issue in modern electronic devices. Herein, we demonstrated the conversion of the Schottky nature of the Ni-Si junction, one of the most commonly used metal-semiconductor junctions, into an Ohmic contact with low contact resistance by inserting a single layer of graphene. The contact resistance achieved from the junction incorporating graphene was about 10(-8) ~ 10(-9) Ω cm(2) at a Si doping concentration of 10(17) cm(-3).

About this research paper

What this paper is about

The rectifying Schottky characteristics of the metal-semiconductor junction with high contact resistance have been a serious issue in modern electronic devices. Herein, we demonstrated the conversion of the Schottky nature of the Ni-Si junction, one of the most commonly used metal-semiconductor junctions, into an Ohmic contact with low contact resistance by inserting a single layer of graphene. The contact resistance achieved from the junction incorporating graphene was about 10(-8) ~ 10(-9) Ω cm(2) at a Si doping concentration of 10(17) cm(-3).

Why it matters

OpenAlex reports 120 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

The rectifying Schottky characteristics of the metal-semiconductor junction with high contact resistance have been a serious issue in modern electronic devices. Herein, we demonstrated the conversion of the Schottky nature of the Ni-Si junction, one of the most commonly used metal-semiconductor junctions, into an Ohmic contact with low contact resistance by inserting a single layer of graphene. The contact resistance achieved from the junction incorporating graphene was about 10(-8) ~ 10(-9) Ω cm(2) at a Si doping concentration of 10(17) cm(-3).

Key concepts: Ohmic contact, Contact resistance, Schottky barrier, Graphene, Materials science, Semiconductor, Metal–semiconductor junction, Schottky diode

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Graphene for True Ohmic Contact at Metal–Semiconductor Junctions — Research Paper | ScholarLens