Low Pressure Chemical Vapor Deposition of Tantalum-Based Material

Tantalum-based materials are attractive as metal electrode as well as for barrier layers. In order to comply with manufacturing requirements, we have developed new processes to deposit various types of tantalum-based films from a novel, volatile liquid precursor called TaPeDiS. The new tantalum source exhibits an excellent versatility as a Ta source with a wide applicability with suitable co-reactants. Tantalum metal, tantalum carbides, tantalum silicon nitride, tantalum silicide and tantalum nitride have all been successfully deposited using TaPeDiS as the Ta precursor. All the deposited films contain low concentration of impurities. The film composition could be adjusted by controlling the respective source amounts. Such tunability can be used in order to set to the desired values for the key electrical properties such as the work function or the conductivity.