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Sintering and ferroelectric properties of lead zirconate titanate ceramics

Univ. of California, Berkeley, CA (United States), Robert B. Atkin, US Atomic Energy Commission (AEC)

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Abstract

Ferroelectric properties, sihtering and grain growth kinetics are interpreted using crystal defect chemistry. Lattice vacancies are created thermally, by substitution impurities with the incorrect valence and by changing the stoichiometry.

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Ferroelectric properties, sihtering and grain growth kinetics are interpreted using crystal defect chemistry. Lattice vacancies are created thermally, by substitution impurities with the incorrect valence and by changing the stoichiometry.

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Available abstract

Ferroelectric properties, sihtering and grain growth kinetics are interpreted using crystal defect chemistry. Lattice vacancies are created thermally, by substitution impurities with the incorrect valence and by changing the stoichiometry.

Key concepts: Lead zirconate titanate, Materials science, Ferroelectricity, Stoichiometry, Valence (chemistry), Impurity, Sintering, Ceramic

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